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IRL5602S
2800
2400
V GS = 0V,   f = 1MHz
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
15
12
I D = -12A
V DS =-16V
V DS =-10V
2000
1600
1200
800
Ciss
Coss
Crss
9
6
3
400
FOR TEST CIRCUIT
0
1
10
100
0
0
10
20
30
40
SEE FIGURE 13
50    60
70
T J = 175 C
T J = 25 C
-V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
°
°
1
1000
100
10
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
BY R DS(on)
100us
1ms
10ms
0.1
0.0
0.4
0.8
V GS = 0 V
1.2        1.6
1
1
T C = 25 ° C
T J = 175 ° C
Single Pulse
10
100
4
-V SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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